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Document Number: 93182
6 Revision: 14-May-08
SD853C..S50K Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 990 A
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 16 - Frequency Characteristics
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
10 100 1000
Rate Of Fall Of Forward Current - di/d t (A/µs)
Maximum Reverse Rec overy Time - Trr (µs)
500 A
I = 1500 A
Si n e Pu l se
1000 A
FM
SD853C..S50K Series
T = 125 °C; V > 100V
J
r
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 50 100 150 200 250 300
Maximum Reverse Recovery Charge - Qrr (µC)
Ra te Of Fa ll Of Forwa rd Curre nt - d i/ d t (A/ µs)
500 A
I = 1500 A
Si n e P u l se
1000 A
FM
SD 8 5 3 C . . S5 0 K Se r i e s
T = 125 °C; V > 100V
J
r
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300
M a x i m u m Re v e rse Re c o v e ry C u r r e n t - Irr ( A )
500 A
Rate Of Fall Of Forwa rd Current - d i/d t (A/µs)
I = 1500 A
Si n e Pu l s e
1000 A
FM
SD 8 5 3 C . . S5 0 K Se r i e s
T = 125 °C; V > 100V
J
r
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba se w id t h ( µs)
Peak Forward Current (A)
10 joules per pulse
6
4
dv/dt = 1000V/µs
T = 125°C, V = 1500V
J
RRM
Si n u so i d a l Pu l s e
0.8
0.6
0.4
0.2
SD853C..S50K Se rie s
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pu l se Ba se w id t h ( µ s)
50 Hz
200
10000
100
4000
dv/ dt = 1000V/ us
400
1000
2000
6000
Peak Forward Current (A)
Si n u so i d a l P u l se
SD 8 5 3 C . . S50K Se ries
T = 55°C, V = 1500V
C
RRM
600
1500
tp
3000
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pu l se Ba se w id t h ( µ s)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Fo rwa rd Current (A)
T = 125°C, V = 1500V
J
RRM
SD 8 5 3 C . . S5 0 K Se r i e s
dv/dt = 1000V/µs
d i/ d t = 300A/ µs
0.8
0.6
tp
8
0.4
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