
Document Number: 93182 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 14-May-08 5
SD853C..S50K Series
Fast Recovery Diodes
(Hockey PUK Version), 990 A
Vishay High Power Products
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Typical Forward Recovery Characteristics
4000
6000
8000
10000
12000
14000
16000
18000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Ha lf Sine Wave Forward Current (A)
SD853C..S50K Series
Init ial T = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
50% Rated V Applied Following Surge
RRM
4000
6000
8000
10000
12000
14000
16000
18000
20000
0.01 0.1 1
Pulse Tra in Dura t io n ( s)
Maximum Non Repetitive Surge Current
Pea k Half Sine Wave Forward Current (A)
SD853C..S50K Series
Initia l T = 125°C
Versus Pulse Tra in Duration.
No Voltage Reapplied
50% Rated V Reapplied
RRM
J
100
1000
10000
123456789
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 1 2 5 ° C
J
SD853C..S50K Series
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Transient Thermal Imp edance Z (K/ W)
Steady State Value
R = 0.04 K/ W
(Single Side Cooled)
R = 0.02 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
SD853C..S50K Serie s
0
50
100
150
200
250
300
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
T = 125°C
T = 2 5 ° C
J
J
SD853C..S50K Series
Ra t e O f Rise O f Fo rw a rd C u rr e n t - d i / d t ( A / u s)
I
V
FP
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