Ch-technology CM75TU-24F Bedienungsanleitung PDF herunterladen (Seite 3)

CM75TU-24F

Trench Gate Design Six IGBTMOD™

75Amperes/1200Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Absolute Maximum Ratings, T

= 25 °C unless otherwise specified

Ratings Symbol CM75TU-24F Units

Junction Temperature T

-40 to 150 °C

Storage Temperature T

stg

-40 to 125 °C

Collector-Emitter Voltage (G-E SHORT) V

CES

1200 Volts

Gate-Emitter Voltage (C-E SHORT) V

GES

±20 Volts

Collector Current (T

= 25°C) I

75 Amperes

Peak Collector Current (T

≤ 150°C) I

150* Amperes

Emitter Current** I

75 Amperes

Peak Emitter Current** I

150* Amperes

Maximum Collector Dissipation (T

< 150°C) P

450 Watts

Mounting Torque, M5 Main Terminal – 31 in-lb

Mounting Torque, M5 Mounting – 31 in-lb

Weight – 680 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

iso

2500 Volts

Static Electrical Characteristics, T

= 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

CES

= V

CES

, V

= 0V ––1mA

Gate Leakage Voltage I

GES

= V

GES

, V

= 0V ––20 µA

Gate-Emitter Threshold Voltage V

GE(th)

= 7.5mA, V

= 10V 5 6 7 Volts

Collector-Emitter Saturation Voltage V

CE(sat)

= 75A, V

= 15V, T

= 25°C – 1.8 2.4 Volts

= 75A, V

= 15V, T

= 125°C – 1.9 – Volts

Total Gate Charge Q

= 600V, I

= 75A, V

= 15V – 825 – nC

Emitter-Collector Voltage** V

= 75A, V

= 0V ––3.2 Volts

* Pulse width and repetition rate should be such that the device junction temperature (T

) does not exceed T

j(max)

rating.

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

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