
1
Trench Gate Design
Six IGBTMOD™
75 Amperes/1200 Volts
CM75TU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
1
Dimensions Inches Millimeters
A 4.21 107.0
B 4.02 102.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.54±0.01 90.0±0.25
E 3.15±0.01 80.0±0.25
F 0.16 4.0
G 1.02 26.0
H 0.31 8.1
J 0.91 23.0
K 0.47 12.0
L 0.43 11.0
Dimensions Inches Millimeters
M 0.57 14.4
N 0.85 21.7
P 0.67 17.0
Q 1.91 48.5
R 0.15 3.75
SM5 M5
T 0.22 Dia. 5.5 Dia.
V 0.03 0.8
W 0.02 0.5
X 0.110 2.79
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-24F is a
1200V (V
CES
), 75 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating V
CES
Type Amperes Volts (x 50)
CM 75 24
V
J
D
J
LL
NN
A
L
C
H
G
F
K
GVP
EUN
N
EB
U
GUN
L
GUP
EUP
N
CM
S - NUTS (5 TYP)
K
J
Q
GWN
V
W
GVN EVN EWN
R
EWP
P
NL
EVP
L
GWP
P
T (4 TYP.)
M
RTC
RTC RTC
RTC
RTC
RTC
A
GUP
EUP
GUN
EUN
N
P
U
V
EVN
GVN
EVP
GVP
W
EWN
GWN
EWP
GWP
W - THICK x X - WIDE
TAB (12 PLACES)
W - THICK x X - WIDE
TAB (12 PLACES)
T
C
MEASURING
POINT
T
C
MEASURING
POINT
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