Ch-technology TBS7_2503DN Bedienungsanleitung PDF herunterladen (Seite 4)

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724)925-7272

Phase Control Thyristor

2500 Amperes/Up to 2600 Volts

Electrical Characteristics, T

=25°

°°

°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Repetitive Peak Reverse Leakage

Current

RRM

=125°

°°

°C, V

RRM

150 mA

Repetitive Peak Forward Leakage

Current

DRM

=125°

°°

°C, V

DRM

150 mA

Peak On-State Voltage V

=125°

°°

°C, I

=2000A

Duty Cycle < 0.01%

1.22 V

Threshold Voltage, Low-level V

(TO)1

=125°

°°

°C, for 375A≤

≤≤

≤I

<7800A

0.9496 V

Slope Resistance, Low-level r

0.1234

mΩ

ΩΩ

Ω

Threshold Voltage, High-level

(TO)2

=125°

°°

°C, for I

>7800A

1.10 V

Slope Resistance, High-level r

0.1149

mΩ

ΩΩ

Ω

ABCD V

Modeling Coefficients

A = 0.89085

B = -2.419 E-2

C = 8.257 E-5

D = 7.861 E-3

=125°

°°

°C, for 10A≤

≤≤

≤I

<60,000A

A + B x Ln(I

) + C x I

D x Sqrt(I

)

Ω

ΩΩ

Ω

−

−−

−

Typical Delay Time t

Tj = 125C, V

=1500V 3

µµ

µs

Maximum Turn-Off Time t

=125°

°°

°C, I

=2000A, di

/dt=5A/µ

µµ

µs

dv/dt=1000V/µ

µµ

µs linear to 1000 V

250

µµ

µs

Minimum Critical dv/dt -

Exponential to V

DRM

dv/dt

=125°

°°

°C

500

V/µ

µµ

µs

Gate Trigger Current I

=25°

°°

°C, V

=12V

250 mA

Gate Trigger Voltage V

=25°

°°

°C, V

=12V

4.2 V

Non-Triggering Gate Voltage V

GDM

=125°

°°

°C, V

DRM

0.5 V

Peak Forward Gate Current I

GTM

20 A

Peak Reverse Gate Voltage V

GRM

20 V

Thermal Characteristics

Characteristics Symbol Min. Typ. Max. Units

Maximum Thermal Resistance, Double Sided

Cooling

Junction to Case

Case to Sink

ΘΘ

ΘJC

ΘΘ

ΘCS

.010

.002

°°

°C/W

°°

°C/W

TBS7262503DataSheet 9/1/99

TBS7

2500A

1 2 3 4 5

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