
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
● IC...................................................................800A
● V
CES ....................................................... 3300V
● Insulated Type
● 1-elements in a pack (for brake)
● AISiC base plate
APPLICATION
DC choppers, Dynamic braking choppers.
CM800E2C-66H
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CIRCUIT DIAGRAM
A
K
(E)
(C)
E
E
C
C
E
G
C
LABEL
C
E
G
C
E
CM
EE
CC
29.5
5
13
61.5
61.5
140
124
±0.25
40
79.4
20.25
57
±0.25
171
190
5.2
40
15
41.25
57
±0.25
57
±0.25
28
20
3 - M4 NUTS
8 - φ7MOUNTING HOLES
6 - M8 NUTS
38
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